An artist’s representation of a hole etched into alternating layers of silicon oxide and silicon nitride using plasma, to make 3D NAND flash memory. Researchers want to refine how they make these ...

In a world fixated on the race for superior artificial intelligence (AI), Chinese scientists have cracked the code to memory speeds once deemed impossible – with a device smaller than a grain of rice.

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

MILPITAS, Calif.--(BUSINESS WIRE)--Sandisk Corporation (NASDAQ: SNDK) today announced the formation of a Technical Advisory Board to guide the development and strategy of its groundbreaking High ...

How secure serial flash memory works. Features provided by a secure serial flash memory. Secure commands with a secure serial flash memory device enable secure functionality; otherwise, it operates ...

The key technical differences between JESD230G and earlier revisions of the NAND Flash Interoperability Standard. How the new Separate Command Address (SCA) Protocol improves performance by ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage 1 (UFS) Ver. 4.1 embedded memory devices with ...